Yarbrough Capital LLC Buys New Shares in Roundhill Memory ETF $DRAM

Yarbrough Capital LLC bought a new position in Roundhill Memory ETF (BATS:DRAM) during the 3rd quarter, according to its most recent Form 13F filing with the Securities and Exchange Commission (SEC). The firm bought 92,506 shares of the ETF’s stock, valued at approximately $5,584,000.

Other institutional investors have also recently bought and sold shares of the company. Bouchey Financial Group Ltd. acquired a new position in Roundhill Memory ETF during the second quarter worth approximately $34,615,000. Oak Grove Capital LLC boosted its holdings in shares of Roundhill Memory ETF by 32.3% in the 3rd quarter. Oak Grove Capital LLC now owns 335,950 shares of the ETF’s stock valued at $20,278,000 after purchasing an additional 82,050 shares during the last quarter. CoreCap Advisors LLC acquired a new position in shares of Roundhill Memory ETF in the 3rd quarter valued at $14,827,000. Members Advisory Group LLC acquired a new position in shares of Roundhill Memory ETF in the 2nd quarter valued at $13,919,000. Finally, Light Street Capital Management LLC purchased a new stake in shares of Roundhill Memory ETF during the 2nd quarter valued at $8,862,000.

Roundhill Memory ETF Stock Up 4.0%

Shares of BATS DRAM traded up $1.88 during trading on Monday, hitting $48.33. 30,281,936 shares of the company traded hands, compared to its average volume of 42,389,316. Roundhill Memory ETF has a 1 year low of $26.14 and a 1 year high of $81.34. The stock has a 50-day moving average of $57.28.

Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.

The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.